Organic EL device and electronic apparatus

ABSTRACT

An organic EL device includes a reflecting layer which has at least light reflectivity, a first electrode which is arranged on the reflecting layer through a first insulating layer, an organic functional layer which is arranged on the first electrode and includes at least a light emitting layer, a second electrode which is arranged on the organic functional layer and has at least light reflectivity, and a holding capacitance. In the organic EL device, an optical resonator which resonates light from the organic functional layer is formed by the reflecting layer and the second electrode, and the holding capacitance is formed using the reflecting layer, the first insulating layer, and the first electrode.

BACKGROUND

1. Technical Field

The present invention relates to an organic EL device, and an electronicapparatus including the organic EL device.

2. Related Art

In recent years, an organic EL device using an electro luminescence(hereinafter, referred to as “EL”) element has attracted considerableattention. For example, research and development on an organic EL deviceincluding a transistor as a switching element which drives the ELelement has been accelerated. There has been known an existing organicEL device as described in JP-A-2007-310311, for example.

The organic EL device as described in JP-A-2007-310311 includes a pixelcircuit. The pixel circuit includes a transistor which controls drivingof an organic EL element constituting a pixel and a capacitive element.

Further, as a method of realizing a capacitive element constituting apixel circuit, a method of realizing the capacitive element using alayer configuration constituting a transistor as described inJP-A-2003-323133 has been known. FIG. 7 is a cross-sectional viewillustrating configurations of a driving transistor and a capacitiveelement in an existing technique.

Further, the organic EL device has a configuration in which an anode, anorganic functional layer including at least a light emitting layer, anda cathode are laminated. For example, the organic EL device of a topemission type has an anode having a light reflectivity or a reflectinglayer so that light generated on the light emitting layer is emitted tothe cathode side.

Further, in JP-A-2007-220395, in order to make brightness of lightemitted from an organic EL device higher, a method of amplifying andextracting light having a resonant wavelength by providing an opticalresonator which resonates light from an organic functional layer betweena reflecting layer provided at a lower layer side of an anode and acathode has been disclosed.

However, in the organic EL device as described in JP-A-2003-323133, asillustrated in FIG. 7, a pixel selection transistor, a drivingtransistor 8F and a capacitive element 8G are required to be formed soas to be lined on the same plane. As a result, there arises a problemthat a capacity to be required cannot be ensured and display quality isdeteriorated. In addition, there is a problem that a size of the pixelcircuit is limited and therefore, an entire device is difficult to bereduced in size.

SUMMARY

An advantage of some aspects of the invention is to solve at least oneof the issues mentioned above and can be realized in the following modesor Application Examples.

Application Example 1

An organic EL device according to the Application Example includes abase substrate, a reflecting layer which is arranged on the basesubstrate and has light reflectivity, a first electrode which isarranged on the reflecting layer through an insulating layer for eachpixel and has light transmissivity, an organic functional layer which isarranged on the first electrode and includes at least a light emittinglayer, a second electrode which is arranged on the organic functionallayer and has light reflectivity and light transmissivity, an opticalresonator which is formed between the reflecting layer and the secondelectrode and resonates light from the organic functional layer, and apixel circuit which drives the pixel having a laminate structure fromthe first electrode to the second electrode and includes at least aholding capacitance. In the organic EL device, the holding capacitanceis constituted using the reflecting layer, the insulating layer, and thefirst electrode.

According to the Application Example, the organic EL device includes theoptical resonator which is arranged on the organic functional layer, isformed between the reflecting layer and the second electrode, andresonates light from the organic functional layer. In addition, theholding capacitance is constituted by the reflecting layer, theinsulating layer, and the first electrode. Therefore, a large apertureratio of the pixel can be obtained while ensuring the holdingcapacitance. This makes it possible to form each pixel smaller in size.

Accordingly, the organic EL device of a top emission type which isreduced in size and has high quality can be provided.

Application Example 2

An organic EL device according to the Application Example includes abase substrate, a reflecting semi-transmissive layer which is arrangedon the base substrate and has light reflectivity and lighttransmissivity, a first electrode which is arranged on the reflectingsemi-transmissive layer through an insulating layer for each pixel andhas light transmissivity, an organic functional layer which is arrangedon the first electrode and includes at least a light emitting layer, asecond electrode which is arranged on the organic functional layer andhas light reflectivity, an optical resonator which is formed between thereflecting semi-transmissive layer and the second electrode andresonates light from the organic functional layer, and a pixel circuitwhich drives the pixel having a laminate structure from the firstelectrode to the second electrode and includes at least a holdingcapacitance. In the organic EL device, the holding capacitance isconstituted using the reflecting semi-transmissive layer, the insulatinglayer, and the first electrode.

According to the Application Example, the organic EL device includes theoptical resonator which is arranged on the organic functional layer, isformed between the reflecting semi-transmissive layer and the secondelectrode, and resonates light from the organic functional layer. Inaddition, the holding capacitance is constituted using the reflectingsemi-transmissive layer, the insulating layer, and the first electrode.Therefore, a large aperture ratio of the pixel can be obtained whileensuring the holding capacitance. This makes it possible to form eachpixel smaller in size.

Accordingly, the organic EL device of a bottom emission type which isreduced in size and has high quality can be provided.

Application Example 3

In the organic EL device according to the above Application Example, itis preferable that emitted lights having different colors be obtained onadjacent pixels.

According to the Application Example, emitted lights having differentcolors can be obtained on adjacent pixels. Therefore, natural displaywith red, green, and blue, for example, can be realized.

Accordingly, an effect that the organic EL device can realize naturaldisplay can be obtained.

Application Example 4

It is preferable that an electronic apparatus according to theApplication Example include the organic EL device according to the aboveApplication Example.

With this, an electronic apparatus which can display with highdefinition and is reduced in size can be realized.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a view schematically illustrating a configuration of anorganic EL device according to a first embodiment.

FIG. 2 is an equivalent circuit diagram illustrating an electricconfiguration of the organic EL device according to the firstembodiment.

FIG. 3 is a schematic plan view illustrating a configuration of a pixelon the organic EL device according to the first embodiment.

FIG. 4 is a schematic cross-sectional view illustrating a configurationof the pixel on the organic EL device according to the first embodiment.

FIG. 5 is a schematic cross-sectional view illustrating a configurationof a pixel on an organic EL device according to a second embodiment.

FIG. 6A is a plan view schematically illustrating an EVF as anelectronic apparatus. FIG. 6B is a plan view schematically illustratingan HMD as an electronic apparatus.

FIG. 7 is a schematic cross-sectional view illustrating a configurationof a pixel on an existing organic EL device.

DETAILED DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the invention are described with referenceto drawings. In the following drawings, scales of layers and members aremade different from actual scales thereof for making the layers and themembers have sizes that can be recognized.

First Embodiment Organic EL Device

At first, a schematic configuration of an organic EL device according tothe embodiment is described with reference to FIG. 1 to FIG. 4.

FIG. 1 is a view schematically illustrating a configuration of anorganic EL device according to the embodiment. FIG. 2 is an equivalentcircuit diagram illustrating an electric configuration of the organic ELdevice according to the embodiment. FIG. 3 is a schematic plan viewillustrating a configuration of a pixel on the organic EL deviceaccording to the embodiment. FIG. 4 is a schematic cross-sectional viewillustrating a configuration of the pixel on the organic EL deviceaccording to the embodiment.

As illustrated in FIG. 1, an organic EL device 100 according to theembodiment is an active matrix-type organic EL device using a thin filmtransistor (hereinafter, referred to as TFT) as a switching element.

The organic EL device 100 includes a substrate 10 as a base substrate,scan lines GL provided on the substrate 10, power lines PL arranged inparallel with the scan lines GL, and signal lines DL extending in adirection intersecting with the scan lines GL. In the organic EL device100, pixels 101 are arranged on a region surrounded by the scan lines GLand the signal lines DL. The pixels 101 are arranged in matrix formalong the extending direction of the scan lines GL and the extendingdirection of the signal lines DL.

Scan line driving circuits 102 and a signal line driving circuit 103 areprovided on peripheries of a region on which the plurality of pixels 101are provided. The plurality of scan lines GL are connected to the scanline driving circuits 102. The plurality of signal lines DL areconnected to the signal line driving circuit 103.

Although not illustrated in FIG. 1, a test circuit, a test pattern, andthe like for testing quality, defection, and the like of a liquidcrystal device during manufacturing and at the time of shipping may beformed on the substrate 10 in addition to the scan line driving circuits102 and the signal line driving circuit 103.

As illustrated in FIG. 2, each pixel 101 includes an organic EL element2D as a light emitting element, a pixel selection transistor 2A, adriving transistor 2B, and a holding capacitance 2C. A gate of the pixelselection transistor 2A is connected to a corresponding scan line GL101.One of a source and a drain of the pixel selection transistor 2A isconnected to a corresponding signal line DL101 and the other thereof isconnected to a gate “g” of the driving transistor 2B. One of a source“s” and a drain “d” of the driving transistor 2B is connected to theorganic EL element 2D and the other thereof is connected to acorresponding power line PL101. In the embodiment, the drain “d” of thedriving transistor 2B is connected to the power line PL101 and thesource “s” thereof is connected to an anode of the organic EL element2D. A cathode 2G of the organic EL element 2D is connected to a powersupply wiring. It is to be noted that the power supply wiring iscommonly wired to all the pixels 101. The holding capacitance 2C isprovided between the source “s” and the gate “g” and connected theretoof the driving transistor 2B.

On each pixel 101, if the scan line GL101 is driven and the pixelselection transistor 2A is made ON state, an image signal suppliedthrough the signal line DL101 is held by the holding capacitance 2C andON/OFF state of the driving transistor 2B is determined in accordancewith a state of the holding capacitance 2C. Further, if the organic ELelement 2D is electrically connected to the power line P101 through thedriving transistor 2B, a driving current is flowed from the power linePL101 to the organic EL element 2D. The organic EL element 2D emitslight with brightness in accordance with an amount of current flowingbetween the anode 3A (positive electrode as a first electrode) and thecathode 2G (negative electrode as a second electrode) of the organic ELelement 2D.

As illustrated in FIG. 3, each pixel 101 has a substantially rectangularplanar shape of which four corners are roundly formed, for example. Adirection along short sides of each pixel 101 corresponds to theextending direction of the scan lines GL101 (see, FIG. 2). Further, adirection along long sides of each pixel 101 corresponds to theextending direction of the signal lines DL101 (see, FIG. 2). An anode 3Aas the first electrode of the organic EL element 2D is arranged for eachpixel 101. Further, the pixel 101 has a fourth interlayer insulatingfilm 3F having an opening 3D which planarly overlaps with the anode 3A.A region of the pixel 101 corresponds to a region on which emitted lightis obtained by the organic EL element 2D and is defined by an outershape of the opening 3D. Each pixel 101 has a display portion 3B and acontact portion 3C.

A reflecting layer 3E is arranged for each pixel 101. In FIG. 3, thefourth interlayer insulating film 3F is shaded for making aconfiguration be easily understood. A region of the fourth interlayerinsulating film 3F, which overlaps with the opening 3D in a planar view,corresponds to the display portion 3B. The display portion 3B is aregion which essentially contributes to display an image on a region ofeach pixel 101. On the display portion 3B, light emitted from theorganic EL element 2D is reflected by the reflecting layer 3E and isemitted to the side of a color filter 4L (see, FIG. 4).

A third interlayer insulating film 4H (see, FIG. 4) as an insulatinglayer is arranged on the reflecting layer 3E. The third interlayerinsulating film 4H has an opening 4I for each pixel 101. A region whichoverlaps with the opening 4I in a planar view corresponds to the contactportion 3C. The contact portion 3C is arranged so as to correspond to anarrangement position of the driving transistor 2B. The anode 3A locatedat the upper side of the third interlayer insulating film 4H isconductively connected onto the contact portion 3C (opening 4I). Thecontact portion 3C is located at an end side in the direction along thelong sides of each pixel 101, for example. It is to be noted that thearrangement position of the contact portion 3C is not limited to themode and may be arranged at a center portion of each pixel 101, forexample, in accordance with the arrangement position of the drivingtransistor 2B.

As illustrated in FIG. 4, a base protecting film 4A is formed on asubstrate surface of the element substrate 10. The base protecting film4A is formed by a silicon oxide film, a silicon nitride film, or thelike. A thin film transistor 4Ba (pixel selection transistor 2A) and athin film transistor 4Bb (driving transistor 2B) are formed on a surfaceside of the base protecting film 4A. The thin film transistor 4Ba andthe thin film transistor 4Bb have lightly doped drain (LLD)configurations in which channel formation regions 4Ca, highly dopedsource/drain regions 4Cb, and lightly doped source/drain regions 4Cc areformed on island-form polycrystalline silicon films 4C. Further, thethin film transistor 4Ba and the thin film transistor 4Bb have gateelectrodes 4E arranged on the channel formation regions 4Ca through agate insulating layer 4D formed by a silicon oxide film.

In the embodiment, each polycrystalline silicon film 4C is apolycrystalline silicon film obtained by forming an amorphous siliconfilm on the element substrate 10, and then, polycrystallizing theamorphous silicon film by laser annealing, lamp annealing, or the like.The lightly doped source/drain region 4Cc is a semiconductor regionwhich is formed by implanting lightly doped n-type impurity ions(phosphorus ions) in a dose of approximately 0.1×10¹³/cm² toapproximately 10×10¹³/cm² in a self-aligned manner by using the gateelectrode 4E as a mask. The highly doped source/drain region 4Cb is asemiconductor region which is formed by implanting highly doped n-typeimpurity ions (phosphorus ions) in a dose of approximately 0.1>10¹⁵/cm²to approximately 10×10¹⁵/cm² by using a resist mask.

A first interlayer insulating film 4Fa and a second interlayerinsulating film 4Fb as a passivation film are formed in this order atthe upper layer side of the thin film transistor 4Ba and the thin filmtransistor 4Bb. The first interlayer insulating film 4Fa is formed by asilicon oxide film. The second interlayer insulating film 4Fb is formedby a silicon nitride film. Signal wirings 4G are formed between thefirst interlayer insulating film 4Fa and the second interlayerinsulating film 4Fb. The reflecting layer 3E formed by an Al film isformed on a surface of the second interlayer insulating film 4Fb. Thethird interlayer insulating film 4H formed by a silicon nitride film isformed on the reflecting layer 3E. The anode 3A as the first electrode,which is formed by an ITO film, is formed on the third interlayerinsulating film 4H. The thin film transistor 4Ba corresponds to thepixel selection transistor 2A in the equivalent circuit diagram. Thesignal line DL101 formed by the signal wiring 4G is connected to thesource region of the thin film transistor 4Ba through a contact hole4Ma. A signal wiring 4Gg formed by the signal wiring 4G is connected tothe drain region of the thin film transistor 4Ba through a contact hole4Mb. The signal wiring 4Gg is connected to a gate electrode 4Eg of thethin film transistor 4Bb through a contact hole 4Md. The thin filmtransistor 4Ba corresponds to the pixel selection transistor 2A in theequivalent circuit diagram. The power line PL101 formed by the signalwiring 4G is connected to the drain region of the thin film transistor4Bb through a contact hole 4Mc. In FIG. 4, the contact hole 4Mc and thepower line PL101 are indicated by dashed lines for distinguishing themfrom the signal wiring 4Gg. The source region of the thin filmtransistor 4Bb is connected to the signal wiring 4Gs through a contacthole 4Me. The signal wiring 4Gs is connected to a signal wiring 3Esformed by the reflecting layer 3E through a contact hole 4Mg. The signalwiring 3Es is connected to the anode 3A through the contact portion 3C(opening 4I). A signal wiring 3Eg formed by the reflecting layer 3E isconnected to the signal wiring 4Gg through a contact hole 4Mf.

Further, the signal wiring 3Eg as a lower electrode and the anode 3A asan upper electrode are opposed to each other through the thirdinterlayer insulating film 4H on a part of the pixel 101 so as toconstitute the holding capacitance 2C.

The fourth interlayer insulating film 3F formed by a silicon oxide filmis formed on the anode 3A. The opening 3D is provided on the fourthinterlayer insulating film 3F. An organic functional layer 4J is formedon the fourth interlayer insulating film 3F and the opening 3D. Acathode 2G as the second electrode, which is formed by an alloy of Mgand Ag, for example, is formed on the organic functional layer 4J.

Further, the organic EL element 2D in which the anode 3A and the cathode2G are opposed to each other through the organic functional layer 4J isconstituted on a region of the opening 3D. An optical resonator 4N whichresonates light from the organic functional layer 4J is constituted bythe cathode 2G and the reflecting layer 3E. A distance between thecathode 2G and the reflecting layer 3E is designed in accordance with awavelength to be resonated. A resonant wavelength on the opticalresonator 4N can be adjusted by changing an optical path length Lbetween the reflecting layer 3E and the cathode 2G. It is assumed that apeak wavelength of a spectrum of light which is desired to be extractedin light emitted from the organic functional layer 4J is λ. Under theassumption, the following relational expression is satisfied. Note thatΦ (radian) indicates phase shift which is generated when light emittedfrom the organic functional layer 4J is reflected by both ends (forexample, reflecting layer 3E and cathode 2G) of the optical resonator4N. For example, in order to extract emitted red light having awavelength of 610 nm, the third interlayer insulating film 4H is set tobe formed by the silicon nitride film having a film thickness of 50 nmand the anode 3A is set to be formed by the ITO film having a filmthickness of 100 nm. Further, the organic functional layer 4J is set tohave a film thickness of 150 nm and the cathode 2G is set to be formedby the alloy of Mg and Ag having a film thickness of 20 nm.(2L)/λ+Φ/(2π)=m (“m” is an integer number)

A sealing insulating film 4Ka formed by a silicon oxide film is formedon the cathode 2G. A color filter 4L formed by a color resist layer isformed on the sealing insulating film 4Ka. The color filter 4L has afunction of transmitting light of a specified wavelength. A sealinginsulating film 4Kb formed by a silicon oxide film is formed on thecolor resist layer 4L.

Light emitted from the organic EL element 2D passes through the colorfilter 4L and is output in a panel surface direction after the lighthaving a specified wavelength has been amplified by the opticalresonator 4N constituted by the cathode 2G and the reflecting layer 3E.That is to say, the organic EL device 100 makes it possible to realizefull color display of a top emission type in which light from theorganic EL element 2D passes through the color filter 4L and is emitted.

As described above, with the organic EL device 100 according to theembodiment, the following effects can be obtained.

The organic EL device 100 includes the cathode 2G which is arranged onthe organic functional layer 4J and has light reflectivity and lighttransmissivity, and the optical resonator 4N which is formed between thereflecting layer 3E and the cathode 2G and resonates light from theorganic functional layer 4J. In addition, the holding capacitance 2C isconstituted by using the reflecting layer 3E, the insulating layer 4H,and the anode 3A. Therefore, the holding capacitance 2C, the pixelselection transistor 2A (4Ba), and the driving transistor 2B (4Bb) arenot required to be arranged on the same plane resulting in reducing apixel circuit in size. This makes it possible to form each pixel 101smaller in size. Accordingly, the organic EL device 100 of a topemission type, which is reduced in size and has high quality, can beprovided.

Second Embodiment

Next, an organic EL device according to the second embodiment isdescribed with reference to FIG. 5.

FIG. 5 is a schematic cross-sectional view illustrating a configurationof a pixel on the organic EL device according to the second embodiment.It is to be noted that the same constituent components as those in thefirst embodiment are denoted with the same reference numerals andoverlapping description is not repeated. In the second embodiment, theinvention is applied to an organic EL device of a bottom emission type.

As illustrated in FIG. 5, an organic EL device 200 according to theembodiment has a pixel 202. As for a configuration of the pixel 202,configurations of the second interlayer insulating film 4Fb andthereunder are the same as those of the organic EL device 100 in theabove first embodiment. A reflecting semi-transmissive layer 5A formedby an Al film is formed on a surface of the second interlayer insulatingfilm 4Fb. The third interlayer insulating film 4H formed by the siliconnitride film is formed on the reflecting semi-transmissive layer 5A. Theanode 3A as the first electrode, which is formed by the ITO film, isformed on the third interlayer insulating film 4H. The thin filmtransistor 4Ba corresponds to the pixel selection transistor 2A in theequivalent circuit diagram. The signal line DL101 formed by the signalwiring 4G is connected to the source region of the thin film transistor4Ba through the contact hole 4Ma. The signal wiring 4Gg formed by thesignal wiring 4G is connected to the drain region of the thin filmtransistor 4Ba through the contact hole 4Mb. The signal wiring 4Gg isconnected to the gate electrode 4Eg of the thin film transistor 4Bbthrough the contact hole 4Md. The thin film transistor 4Ba correspondsto the pixel selection transistor 2A in the equivalent circuit diagram.The power line PL101 formed by the signal wiring 4G is connected to thedrain region of the thin film transistor 4Bb through the contact hole4Mc. In FIG. 5, the contact hole 4Mc and the power line PL101 areindicated by dashed lines for distinguishing them from the signal wiring4Gg. The source region of the thin film transistor 4Bb is connected tothe signal wiring 4Gs through the contact hole 4Me. The signal wiring4Gs is connected to a signal wiring 5As formed by the reflectingsemi-transmissive layer 5A through the contact hole 4Mg. The signalwiring 5As is connected to the anode 3A through the contact portion 3C(opening 4I). A reflecting semi-transmissive layer 5Ag is connected tothe signal wiring 4Gg through the contact hole 4Mf.

Further, the reflecting semi-transmissive layer 5Ag as a lower electrodeand the anode 3A as an upper electrode are opposed to each other throughthe third interlayer insulating film 4H on a part of the pixel 202 so asto form the holding capacitance 2C.

The fourth interlayer insulating film 3F formed by the silicon oxidefilm is formed on the anode 3A. The opening 3D is provided on the fourthinterlayer insulating film 3F. The organic functional layer 4J is formedon the fourth interlayer insulating film 3F and the opening 3D. Thecathode 5C as the second electrode, which is formed by an alloy of Mgand Ag, or Al, for example, is formed on the organic functional layer4J. The cathode 5C also serves as a reflecting layer. The sealinginsulating film 4Ka formed by the silicon oxide film is formed on thecathode 5C.

Further, the organic EL element 2D in which the anode 3A and the cathode5C are opposed to each other through the organic functional layer 43 isconstituted on a region of the opening 3D. The optical resonator 4Nwhich resonates light from the organic functional layer 4J isconstituted by the cathode 5C and the reflecting semi-transmissive layer5A. A distance between the cathode 5C and the reflectingsemi-transmissive layer 5A is designed in accordance with light of awavelength to be resonated. For example, in order to extract emitted redlight having a wavelength of 610 nm, the reflecting semi-transmissivelayer 5A is set to be formed by the Al film having a film thickness of20 nm, the third interlayer insulating film 4H is set to be formed bythe silicon nitride film having a film thickness of 50 nm, and the anode3A is set to be formed by the ITO film having a film thickness of 100nm. Further, the organic functional layer 43 is set to have a filmthickness of 150 nm and the cathode 5C is set to be formed by the Alfilm having a film thickness of 20 nm.

Light emitted from the organic EL element 2D passes through the elementsubstrate 10 and is emitted in a panel rear surface direction after thelight having a specified wavelength has been amplified by the opticalresonator 4N formed by the cathode 5C and the reflectingsemi-transmissive layer 5A.

As described above, with the organic EL device 201 according to theembodiment, the following effects can be obtained.

The holding capacitance 2C forming a pixel circuit can be laminated withthe display portion 3B by forming the holding capacitance 2C using thereflecting semi-transmissive layer 5A, the insulating layer 4H, and theanode 3A. This makes it possible to form each pixel 202 smaller in size.Accordingly, the organic EL device 201 of a bottom emission type, whichis reduced in size and has high quality, can be provided.

Third Embodiment

Next, electronic apparatuses according to the embodiment are describedwith reference to FIGS. 6A and 6B. FIG. 6A is a view illustrating adigital camera as an electronic apparatus. FIG. 6B is a viewillustrating a head mounted display (HMD) as an electronic apparatus.

As illustrated in FIG. 6A, a digital camera 60A as an electronicapparatus according to the embodiment includes a main unit 6B having anoptical system such as an image capturing element. An electronic viewfinder (EVF) 6A for visually recognizing a target and a monitor 6C fordisplaying a captured image are provided on the main unit 6B. Theorganic EL device 100 (or the organic EL device 201) according to theabove embodiment is mounted on each of the electronic finder 6A and themonitor 6C.

As illustrated in FIG. 6B, a head mounted display 60B as anotherelectronic apparatus according to the embodiment includes a pair ofsupporting portions 6H for attaching the head mounted display 60B on ahead of a viewer and a display portion 6G which is provided between thepair of supporting portions 6H and displays an image for right and lefteyes of the viewer.

The organic EL device 100 (or the organic EL device 201) according tothe above embodiment is mounted on the display portion 6G.

The organic EL device 100 (or the organic EL device 201) according tothe above embodiment is reduced in size and can display an image withhigh quality. Therefore, the digital camera 60A reduced in size and thehead mounted display 60B which is light-weight can be realized by usingthe organic EL device 100 (or the organic EL device 201).

Electronic apparatuses to which the organic EL device 100 or 201 isapplied are not limited to the digital camera 60A and the head mounteddisplay 60B. For example, the electronic apparatus to which the organicEL device 100 or 201 is applied can be used as a display portion of aninformation terminal apparatus such as a mobile phone, a PDA, and a GPS.

What is claimed is:
 1. An organic EL device including a plurality ofpixels, the organic EL device comprising: a base substrate; a reflectinglayer which is arranged on the base substrate and has lightreflectivity; a first electrode which is arranged on the reflectinglayer through a first insulating layer for each pixel and has lighttransmissivity; an organic functional layer which is arranged on thefirst electrode and includes at least a light emitting layer; a secondelectrode which is arranged on the organic functional layer and haslight reflectivity and light transmissivity; and a holding capacitance,an optical resonator which resonates light from the organic functionallayer being formed by the reflecting layer and the second electrode, andthe holding capacitance being formed by using the reflecting layer, thefirst insulating layer, and the first electrode, the holding capacitancebeing a capacitance connected to terminals of a driving transistor, thedriving transistor arranged on a different plane than the holdingcapacitance.
 2. The organic EL device according to claim 1, furtherincluding a first transistor connected to the first electrode, theholding capacitance being provided between a source of the firsttransistor and a gate of the first transistor and connected thereto. 3.The organic EL device according to claim 1, the reflecting layer beingarranged for each pixel.
 4. The organic EL device according to claim 2,the reflecting layer being electrically connected to the gate of thefirst transistor.
 5. The organic EL device according to claim 2, furthercomprising a first signal wiring which is provided on a layer which isdifferent from a gate electrode of the first transistor through a secondinsulating layer, and is different from the reflecting layer through athird insulating layer, the gate electrode being connected to the firstsignal wiring through a first contact hole which is provided on thesecond insulating layer, and the reflecting layer being connected to thefirst signal wiring through a second contact hole which is provided onthe third insulating layer.
 6. The organic EL device according to claim2, further including a second transistor which is provided between asecond signal wiring and a gate of the first transistor and connectedthereto.
 7. The organic EL device according to claim 6, a drain of thesecond transistor being connected to the second signal wiring through athird contact hole which is provided on the second insulating layer. 8.An organic EL device comprising: a reflecting layer which has at leastlight reflectivity; a first electrode which is arranged on thereflecting layer through a first insulating layer; a second electrodewhich has at least light reflectivity; an organic functional layer whichis arranged between the first electrode and the second electrode andincludes at least a light emitting layer; and a holding capacitance, anoptical resonator which resonates light from the organic functionallayer being formed by the reflecting layer and the second electrode, andthe holding capacitance is formed using the reflecting layer, the firstinsulating layer, and the first electrode, the holding capacitance beinga capacitance connected to terminals of a driving transistor, thedriving transistor arranged on a different plane than the holdingcapacitance.
 9. The organic EL device according to claim 1, each pixeladjacent to each other being configured to emit light of a colordifferent from that of an adjacent pixel's light.
 10. An electronicapparatus comprising the organic EL device according to claim
 1. 11. Anelectronic apparatus comprising the organic EL device according to claim2.
 12. An electronic apparatus comprising the organic EL deviceaccording to claim
 3. 13. An electronic apparatus comprising the organicEL device according to claim
 4. 14. An electronic apparatus comprisingthe organic EL device according to claim
 5. 15. An electronic apparatuscomprising the organic EL device according to claim
 6. 16. An electronicapparatus comprising the organic EL device according to claim
 7. 17. Anelectronic apparatus comprising the organic EL device according to claim8.
 18. An electronic apparatus comprising the organic EL deviceaccording to claim
 9. 19. An organic EL device comprising: a reflectinglayer; a first insulating layer disposed on the reflecting layer; afirst electrode disposed on the insulating layer; an organic functionallayer disposed on the first electrode; a second electrode disposed onthe organic functional layer; and a holding capacitor, wherein thereflecting layer, the first insulating layer, and the first electrodedefine the holding capacitor, the holding capacitor being a capacitorconnected to terminals of a driving transistor, the driving transistorarranged on a different plane than the holding capacitor.
 20. Theorganic EL device of claim 19 further comprising an optical resonatorthat includes the reflecting layer and the second electrode, wherein adistance between the reflecting layer the second electrode sets aresonant wavelength.
 21. The organic EL device according to claim 19,further comprising a first transistor connected to the first electrode,a capacitance of the holding capacitor being provided between a sourceof the first transistor and a gate of the first transistor and connectedthereto.
 22. The organic EL device according to claim 21, furthercomprising a first signal wiring which is provided on a layer which isdifferent from a gate electrode of the first transistor through a secondinsulating layer, and is electrically isolated from the reflecting layervia a third insulating layer, the gate electrode being connected to thefirst signal wiring through a first contact hole which is provided inthe second insulating layer, and the reflecting layer being connected tothe first signal wiring through a second contact hole which is providedin the third insulating layer.
 23. The organic EL device according toclaim 19, being for a plurality of pixels, each pixel adjacent beingconfigured to emit light of a different color.